Thumbnail Image
Publication

Spin-polarized current injection induced magnetic reconstruction at oxide interface

Fang, F.
; 
Yin, Y. W.
; 
Li, Qi
; 
Lupke, G.
Abstract
Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications.
Description
Date
2018-01-04
Journal Title
Journal ISSN
Volume Title
Publisher
Collections
Applied Science
Show all metadata
Download Dataset
Files
Thumbnail Image
spin_polarized.pdf
Adobe PDF, 826.3 KB
Rights Holder
Usage License
Embargo
Research Projects
Organizational Units
Journal Issue
Keywords
Citation
Advisor
Department
Applied Science
DOI
https://www.doi.org/10.1038/srep40048
URI
https://scholarworks.wm.edu/handle/internal/1413
Embedded videos