Doctor of Philosophy (Ph.D.)
Quantitative verification of the existence of static acoustic displacements generated by acoustic waves propagating in single crystal samples of intrinsic silicon is presented. Measurements are made of the static displacements generated by 30 MHz acoustic compressional waves propagating along the 111 , 110 , and 100 crystalline directions. From these measurements the nonlinearity parameters are calculated and found to have the value 3.87 along the 111 direction, 4.23 along the 110 direction, and 2.13 along the 100 direction. These results are in agreement with values obtained independently from harmonic generation and pressure derivative measurements. Implications of the present work to the thermodynamics of single crystals are discussed.
© The Author
Li, Ka Kui Peter, "Acoustic radiation-induced static strain in single crystal silicon" (1984). Dissertations, Theses, and Masters Projects. Paper 1539623751.