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Bond angles for O-H defects in SnO2 from polarization properties of their vibrational modes
Bekisli, Figen Fowler, W. Beall Stavola, Michael Spahr, Erik Luepke, Gunter
Bekisli, Figen
Fowler, W. Beall
Stavola, Michael
Spahr, Erik
Luepke, Gunter
Abstract
Infrared absorption experiments made with polarized light yield significant insights into the possible structures of one- and two-O-H defects in SnO2 that are produced by thermal annealing treatments. These polarized absorption results reveal that a two-O-H defect must involve symmetry-equivalent O-H sites and that the axes of both one- and two-O-H defects are 63 degrees-68 degrees from the c axis of the rutile structure. These O-H bond angles found by experiment restrict the microscopic defect structures that are possible and suggest structures associated with either a metal atom substituting for Sn or an interstitial metal atom (such as Sn).
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2012-01-01
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Applied Science
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https://doi.org/10.1103/PhysRevB.85.205202