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Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions
Rao, S. V. S. Nageswara Tolk, N. H. Feldman, L. C. Luepke, G.
Rao, S. V. S. Nageswara
Tolk, N. H.
Feldman, L. C.
Luepke, G.
Abstract
We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature (3)He ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
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2011-01-01
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Applied Science
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https://doi.org/10.1103/PhysRevB.83.045204