Document Type
Article
Department/Program
Applied Science
Journal Title
Physical Review B
Pub Date
2011
Volume
83
Issue
4
Abstract
We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature (3)He ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
Recommended Citation
Rao, S. V. S. Nageswara; Tolk, N. H.; Feldman, L. C.; and Luepke, G., Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions (2011). Physical Review B, 83(4).
10.1103/PhysRevB.83.045204
DOI
10.1103/PhysRevB.83.045204
