"Bond angles for O-H defects in SnO2 from polarization properties of th" by Figen Bekisli, W. Beall Fowler et al.
 

Document Type

Article

Department/Program

Applied Science

Journal Title

Physical Review B

Pub Date

2012

Volume

85

Issue

20

Abstract

Infrared absorption experiments made with polarized light yield significant insights into the possible structures of one- and two-O-H defects in SnO2 that are produced by thermal annealing treatments. These polarized absorption results reveal that a two-O-H defect must involve symmetry-equivalent O-H sites and that the axes of both one- and two-O-H defects are 63 degrees-68 degrees from the c axis of the rutile structure. These O-H bond angles found by experiment restrict the microscopic defect structures that are possible and suggest structures associated with either a metal atom substituting for Sn or an interstitial metal atom (such as Sn).

DOI

10.1103/PhysRevB.85.205202

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