Random Field Driven Spatial Complexity at the Mott Transition in VO2

Authors

Shuo Liu
B. Phillabaum
E. W. Carlson
M. M. Qazilbash, William & MaryFollow
et al.

Document Type

Article

Department/Program

Physics

Journal Title

Physical Review Letters

Pub Date

1-2016

Volume

116

Issue

3

Abstract

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

Recommended Citation

Liu, Shuo; Phillabaum, B.; Carlson, E. W.; Qazilbash, M. M.; and et al., Random Field Driven Spatial Complexity at the Mott Transition in VO2 (2016). Physical Review Letters, 116(3).
https://doi.org/10.1103/PhysRevLett.116.036401

DOI

https://doi.org/10.1103/PhysRevLett.116.036401

Publisher Statement

This work is made available for educational and personal use only. Copyright is credited to the authors. Any other uses should be directed to the publisher.